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Nanoelectronics
and
Nanotechnology Dr. Clifford Lau
President-elect
IEEE Nanotechnology Council
703-696-0371
c.lau@ieee.org The presenter is solely responsible for the opinions expressed here. Scientific research in many disciplines in the early
to mid 1990s began to approach nanometer scale,
although we didn’t call it nanotechnology at the time. 1980 1990 2000 Microelectronics
Physics
Chemistry
Materials
Molecular biology Nanotechnology Historical Perspective National Nanotechnology Initiative (NNI) Afterglow of Sputnik had run its course
Need to re-energize the next generation S&E
Interagency working group began planning in 1996
Support in OSTP
President Clinton announced NNI in January 2000
NNI officially began in FY2001 NNI Investment Strategy Fundamental nanoscience and engineering research
- Nano-Bio systems
- Novel materials, processes, and properties
- Nanoscale devices and system architectures
- Theory, modeling, and simulations
Grand challenges
- Chem-bio detection and protection
- Instrumentation and metrology
- Nanoelectronics/photonics/magnetics
- Health care, therapeutics, diagnostics
- Environmental improvement
- Energy conversion and storage
Centers excellence
Research infrastructures
Societal implications and workforce preparation Research and technology development at the atomic, molecular or macromolecular levels, in the length scale of approximately 1 - 100 nanometer range, to provide a fundamental understanding of phenomena and materials at the nanoscale and to create and use structures, devices and systems that have novel properties and functions because of their small and/or intermediate size. The novel and differentiating properties and functions are developed at a critical length scale of matter typically under 100 nm. Nanotechnology research and development includes manipulation under control of the nanoscale structures and their integration into larger material components, systems and architectures. Within these larger scale assemblies, the control and construction of their structures and components remains at the nanometer scale. In some particular cases, the critical length scale for novel properties and phenomena may be under 1 nm (e.g., manipulation of atoms at ~0.1 nm) or be larger than 100 nm (e.g., nanoparticle reinforced polymers have the unique feature at ~ 200-300 nm as a function of the local bridges or bonds between the nano particles and the polymer). Nanotechnology Definition
(NSET, February 2000) NNI Participating Agency Programs NSF Nanocience/engineeering, fundamental knowledge,
instrumentation, centers
DoD Information technology, high performance materials,
chem-bio-radiological detections
DoC/NIST Measurements and standards, commercialization
DoE Energy science, environment, non-proliferation
DoJ Diagnostics – crime, contraband detections
DoT Smart, light weight materials for transportation
EPA Environment, green manufacturing of nanomaterials
FDA Food packaging, drug delivery, bio-devices
Intel Comm Detection, prevention of technological surprises
NASA Lighter, smaller adaptive spacecraft, human status
monitors, radiation hardening
NIH Therapeutics, diagnostics, biocompatible materials
miniaturized tools, cellular and molecular sensing
NRC Radiological detections, material reliability
USDA Biotech for improved crop yields, food packaging National Nanotechnology Initiative, 2001 FY2000 FY2001 FY2002 FY2003 FY2004
(enacted) (request) (request) NNI was launched in FY2001, with the goal to double the FY00 baseline of $270M. Since then federal investment in nanotechnology has tripled. NSF $97M $150M $204M $221M $249M
DoD $70M $123M $224M $243M $222M
DoE $58M $88M $89M $133M $197M
NASA $4M $22M $35M $33M $31M
NIH/HHS $32M $40M $59M $65M $70M
NIST/DoC $8M $33M $77M $69M $62M
EPA $5M $6M $6M $5M
DHS(TSA) $2M $2M $2M $2M
USDA $1M $10M
DOJ $1M $1M $1M
Total $270M $464M $697.1M $773.7M $849.5M Global Participation in Nanoscience Center Name Principal Investigator Institution
NSF
National Nanofabrication Users Network (NNUN)
Hu Univ. of California Santa Barbara
Tiwari Cornell University
Harris Howard University
Fonash Pennsylvania State University
Plummer Stanford University
Computational Nanotechnology Network (NCN)
Lundstrom Purdue
DOE
Integrated NanoSystems Michalske Sandia and Los Alamos National Laboratories
Nanostructured Materials Lowndes Oak Ridge National Lab.
Molecular Foundry Alivisatos Lawrence Berkeley National Laboratory
Functional Nanomaterials Hwang Brookhaven Laboratory
Nanoscale Materials Bader Argonne Nanotechnology User Centers and Networks Murday, NRL #140a 2/03 Name Principal Investigator Institution
NSF
NSEC (Nanoscale Science and Engineering Center)
Nanoscale Systems in Information Technologies Buhrman Cornell University
Nanoscience in Biological and Environmental Engineering Smalley Rice University
Integrated Nanopatterning and Detection Mirkin Northwestern University
Electronic Transport in Molecular Nanostructures Yardley Columbia University
Science of Nanoscale Systems and their Device Applications Westervelt Harvard University
Directed Assembly of Nanostructures Siegel Rensselaer Polytechnic Institute
STC (Science and Technology Center)
Nanobiotechnology, Science and Technology Center Baird Cornell University
MRSEC (Materials Research Science and Engineering Centers)
Nanoscopic Materials Design Groves Univ Virginia
Nanostructured Materials Chien Johns Hopkins University
Semiconductor Physics in Nanostructures Doezema Univ Oklahoma and Arkansas
Nanostructured Materials and Interfaces Eom Univ Wisconsin Madison
Quantum and Spin Phenomena in Nanomagnetic Structures Liou Univ Nebraska Lincoln
Research on the Structure of Matter Bonnell Univ Pennsylvania
DOD
Institute for Soldier Nanotechnologies Thomas Mass. Inst. of Technology
Center for Nanoscience Innovation for Defense Awschalom UC Santa Barbara
Nanoscience Institute Prinz Naval Research Laboratory
NASA
Institute for Cell Mimetic Space Exploration Ho UCLA
Institute for Intelligent Bio-Nanomaterials Junkins Texas A&M
& Structures for Aerospace Vehicles
Bio-Inspection, Design and Processing of Aksay Princeton
Multi-functional Nanocomposites
Institute for Nanoelectronics and Computing Datta Purdue Centers with Nanotechnology Focus RICE NORTHWESTERN Murday, NRL #140b 1/03 NRL Nanoscience InstituteFacility and Program Nanoassembly
Nanofilaments: Interactions, Manipulation and Assembly
Chemical Assembly of Multifunctional Electronics
Directed Self-Assembly of Biologically-Based Nanostructures
Template-Directed Molecular Imprinting
Chemical Templates for Nanocluster Assembly
Nano-optics
Photonic Bandgap Materials
Org. and Bio. Conjugated Luminescent Quantum Dots
Organic Light Emitting Materials & Devices
Nanoscale-Enhanced Processes in a Quantum Dot Structures
Nanochemistry
Functionalized Dendrimeric Materials
Polymers and Supramolecules for Devices
Nanoelectronics
Coherence, Correlation and Control in Nanostructures
Neural-Electronic Interfaces
Nanomechanics
Nano-Elastic Dynamics
Collaborations
Developing with universities, NSWC Indian Head, ARL Adelphi, NAVAIR
Open Fall 2003 Dr. Gary Prinz, NRL Code 1100 http://nanoscience.nrl.navy.mil/ DoD Perspective Nanoscience and nanotechnology continue to be one of the top priority research programs within DoD
Nanotechnology will impact practically all areas of interest to DoD
Potential for payoff to DoD is great, and is worth the investment DoD Investment on Nanotechnology FY2000 FY2001 FY2002 FY2003 FY2004
DoD $70M $123M $180M $243M $222M Planned Note: FY04 budget is estimate only, with high
uncertainty in DARPA investment on nano. * NANOELECTRONICS/NANOPHOTONICS/NANOMAGNETICS
Network Centric Warfare
Information Dominance
Uninhabited Combat Vehicles
Automation/Robotics for Reduced Manning
Effective training through virtual reality
Digital signal processing and LPI communications
* NANOMATERIALS “BY DESIGN”
High Performance, Affordable Materials
Multifunction, Adaptive (Smart) Materials
Nanoengineered Functional Materials
Reduced Maintenance costs
* BIONANOTECHNOLOGY - WARFIGHTER PROTECTION
Chemical/Biological Agent detection/destruction
Human Performance/Health Monitor/Prophylaxis DoD Focused Areas in NNI DoD Programs in Nanotechnology Army
Nanostructured polymers, quantum dots for IR sensing, nanoengineered clusters, nano-composites,
Institute for Soldier Nanotechnology (ISN)
Navy
Nanoelectronics, nanowires and carbon nanotubes, nanostructured materials, ultrafine and thermal
barrier nanocoatings, nanobio-materials and processes, nanomagnetics and non-volatile memories,
IR transparent nanomaterials
Air Force
Nanostructure devices, nanomaterials by design, nano-bio interfaces, polymer nanocomposites,
hybrid inorganic/organic nanomaterials, nanosensors for aerospace applications, nano-energetic
particles for explosives and propulsion
DARPA
Bio-molecular microsystems, metamaterials, molecular electronics, spin electronics, quantum
information sciences, nanoscale mechanical arrays
SBIR
Nanotechnologies, quantum devices, bio-chem decontaminations
OSD
Multidisciplinary University Research Initiative (MURI), DEPSCoR, NDSEG FY01-06 DURINT Research Program Investigator Prime Institution Research Topic
Josef Michl Univ. of Colorado Nanoscale Machines and Motors
Mehmet Sarikaya Univ. of Washington Molecular Control of Nanoelectronic and Nanomagnetic
Structures
Michael Zachariah Univ. of Minnesota Nano-energetic Materials
Hong-Liang Cui Stevens Inst. of Tech. Characterization of Nanoscale Elements, Devices, Systems
Richard Smalley Rice Univ. Synthesis, Purification, and Functionalization of Carbon
Nanotubes
Randall Feenstra Carnegie Mellon Univ. Nanoporous Semiconductors – Matrices and Substrates
Subra Suresh MIT Deformation, Fatigue, and Fracture of Nanomaterials
Horia Metiu UC Santa Barbara Nanostructure for Catalysis
Mary C. Boyce MIT Polymeric Nanocomposites
Paras Prasad SUNY at Buffalo Polymeric Nanophotonics and Nanoelectronics
Terry Orlando MIT Quantum Computing and Quantum Devices
James Lukens SUNY, Stony Brook Quantum Computing and Quantum Devices
Chad Mirkin Northwestern Univ. Molecular Recognition and Signal Transduction
Anupam Madhukar USC Synthesis and Modification of Nanostructure Surfaces
George Whitesides Harvard Univ. Magnetic Nanoparticles for Application in Biotechnology Multidisciplinary University Research
Initiative (MURI) FY Investigator Institution Research Topic
98-03 J. Sturm Princeton Univ. Engineering of Nanostructures and Devices
98-03 A. Epstein MIT Microthermal Engines for Compact Powers
98-03 B. Zinn Georgia Tech Microthermal Engines for Compact Powers
98-03 S. Goodnick Arizona State U. Low-power, High Performance Nanoelectronic Circuits
98-03 James Univ. Minnesota Computational Tools for Design of Nanodevices
99-04 Brueck U. New Mexico Nanolithograph
99-04 Datta Purdue Univ. Spin Semiconductors and Electronics
00-05 Mabuchi Caltech Quantum Computing and Quantum Memory
00-05 Shapiro MIT Quantum Computing and Quantum Memory
01-06 Bruce Dunn UCLA 3-D Nanoarchitectures for Electrochemical Power Source
01-06 Ken Poppelmeier Northwestern 3-D Nanoarchitectures for Electrochemical Power Source
01-06 Shelton Taylor Univ Virginia Multifunctional Nano-engineered Coatings
01-06 Ed Cussler Univ. Minnesota Multifunctional Nano-engineered Coatings
02-07 I. Schuller UC San Diego Integrated Nanosensors
02-07 D. Lambeth CMU Integrated Nanosensors
03-08 Dan van der Weide Wisconsin Nanoprobes for Laboratory Design Instrum. Research
03-08 Lukas Novotny U. Rochester Nanoprobes for Laboratory Design Instrum. Research
03-08 William Doolittle Georgia Tech Next Generation Epitaxy for Laboratory Instru. Design
03-08 Jimmy Xu Brown Univ. Direct Nanoscale Conversion of Biomolecular Signals
Nanoimprint Lithography
Princeton University, Professor Stephen Chou Imprint mold with 10nm
diameter pillars 10nm diameter holes
imprinted in PMMA 10nm diameter metal
dots fabricated by nano-
imprint lithography Biological agent detection
PCR-free bioagent recognition
DNA/Nanosphere-based
Anthrax detection in solution
30 nucleotide region of a 141-mer PCR product (blue dot)
Sensitivity: <10 femtomole
Detect single BP mismatch
Anthrax detection on substrate
Agent binds Au cluster
Ag: 105 amplification
Amount: grey scale
Tested
Dugway PG, 2001
32 parallel tests in 1.5 hrs!
Active technology transfer
Nanosphere (spin off company)
Medical & industrial interest Colorimetric Detection of Anthrax
in Solution Cluster Engineered MaterialsChad Mirkin, NWU Colorimetric Detection of Anthrax
on Substrate RESEARCHERS
U CO
Northwestern U
NIST: MD and CO (no MURI funds) MOLECULAR MACHINES DURINT
Prof. Josef Michl, Univ. of Colorado COLLABORATIONS AND TRANSITIONS
Collaboration with NIST, MD: horizontal rotors prepared with and without “paddle” for NIST Microfluidics Pgm
Collaboration with NIST, CO: molecular rotor prepared for NIST single electron transitor program
Collaborations with industry: IBM will do electron beam lithography and Zyvex is supplying patterned surfaces Proposed Laser Protection
Using Molecular Machines RESEARCH GOALS
Use computation to guide design
Design and build molecular machine components
Attach the machines to surfaces
Coherently operate the machines
Characterize the nanoscale properties
CHALLENGES: All of the above
ARMY/DOD RELEVANCE
Laser protection
Power generation
Chem/bio agent detection
Molecular memory, electronics and devices
Microfluidics
Control of flow at surfaces Nano-Systems Energetics (DURINT)P.I.: Michael Zachariah, U. Minnesota, mrz@me.umn.eduhttp://www.me.umn.edu/~mrz/CNER.htm Research Accomplishments
Developed continuous flow reactor for nanoparticle
production and passivation (copy at ARL-WMRD)
Formulated model for nanoparticle formation and
growth
Designed experiments for characterization of size,
composition and reactivity of nanoparticles
Computed oxidative reactions of energetic materials
(Nitromethane, HMX and FOX-7) on aluminum
surfaces
Objective
Develop new methods for and understanding of
nano-scale energetic materials
Synthesis,
Characterization,
Reactivity Methods for nanoparticle growth and surface passivation.
Sol-Gel methods for generation of nanostructures
Modeling of particle formation from thermal plasmas.
Methods for nanoparticle characterization
Thermochemistry of nanoparticles and nanostructures.
Nanoparticle oxidation kinetics.
Characterize rates of energy release for nanostructures.
Measurement of solid-solid exothermic reactions.
Computational chemistry/physics of nanostructures. CNER: Center for
Nano-Energetics Research Research Areas Nanoscale Energetic Materials Approach
prove molecular circuit programming through simulation
predict properties of new molecules
synthesize new molecules
self-assemble in nanocells
program and package nanocells April-June 01 Accomplishments:
Half-adder, inverter and NAND simulated
25 new molecules synthesized
Nanocell wafers (e-beam) designed and in fab
Dry box ready for assembly
Test bed nanocells (optical) in fab
60 nm Au particle deposition developed
Molecule-based circuits designed
New Molecules proposed for memory Impact & Transition: Molecular Electronics Corp., Motorola Technology Issues: Nanocell assembly, programming, and packaging Nanocell Approach to a Molecular Computer
J. Tour (PI, Rice U.), D. Allara and P. Weiss (Penn State), P. Franzon (NC State), P. Lincoln (SRI), M. Reed (Yale), J. Seminario (S. Carolina), R. Tsui, H. Goronkin, I. Amlani (Motorola). Objectives: Construct logic devices using programmable Nanocells 2.1V -.05V Input A time (s) 0 60.0 930nA -40nA Output 1 time (s) 0 60.0 W0 W1 R1 R0 RW0 RW1 RD0 RD1 Theoretical Analysis, Design,
and Simulation of the Nanocell Calculated electrical characteristics for two new molecules proposed during the kick-off meeting: the dioxo with three rings (1), and the dinitro with four rings (2).
First realistic molecular simulation of a fragment of the nanocell (below).
New candidates for one-year room temperature memory proposed (lower right). R = H, Ac
R1, R2 = H, NO2, NH2 DURINT - Nanoporous SiC and GaNStrain Relief During Epitaxy of GaN on porous SiCProf. Randall Feenstra, CMU Objective:
Relieve the strain which occurs when films are grown on substrates with mismatched lattice constant.
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Results:
GaN films have been grown by MBE on porous SiC substrates with a range of surface pore densities. Strain in the films is characterized by stylus profilometry. Significant strain relaxation is found, with the residual strain being about 3 times smaller than for films grown on nonporous substrates.
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Interpretation:
For MBE growth, pores from the SiC continue into the GaN. These pores are “stress concentrators”, acting as nucleation sites for half loop dislocation as seen by TEM. These half loops then propagate and relieve the strain in the film. TEM image of MBE-grown GaN on porous SiC Strain in GaN film vs. surface pore density Objectives To understand and control the materials chemistry and physics
of nanotubes and nanotube-based materials;
To develop new nano-composites with enhanced mechanical,
thermal and electrical properties;
To fabricate nanotube-based electron field emission devices and
evaluate their properties for technological applications;
To investigate energy-storage capability of carbon nanotubes;
To fabricate nanotube NanoElectroMechanical Systems (NEMS). Carbon Nanotube Based Materials and DevicesUniversity of North Carolina at Chapel HillURL: http://www.physics.unc.edu/~zhou/muri Major Accomplishments Multidisciplinary Approach DOD Relevance New materials and technology for structural reinforcement,
energy storage, electron emission, and nano-device applications. Established materials synthesis and processing capability
First observation of rolling at nanometer scale, including manipulation and simulation of NEMS friction
Measured and simulated the electro-mechanical properties of
carbon nanotubes
Synthesized nanotube-based polymer composites
Fabricated nanotube field emission devices and demonstrated
high current capability (4A/cm2)
Performed the first 13C NMR measurement of the electronic
properties of the carbon nanotubes.
Demonstrated high Li storage capacity in processed SWNTs. Research Highlights Carbon nanotube field emitters provide
high current density and stability Rolling and Friction at the atomic scale Materials synthesis, assembly, functionalization;
Nanometer-scale manipulation and measurements of transport,
electronic and mechanical properties;
Spectroscopic characterization and studies;
Large-scale ab inito and empirical molecular dynamics simulation and theoretical calculations. MURI Team UNC: Physics, Chemistry, Materials Science and Computer Science
NCSU: Physics and Materials Science
Duke: Chemistry
Industrial Partners: Lucent Technologies, Raychem Co. and Ise Electronics An Environmentally Compliant, Multi-Functional Coating for Aerospace Using Molecular and Nano-Engineering MethodsUniversity of Virginia, Prof. Shelton Taylor Synthesis, Purification, and Assembly of SWNT Carbon Fibers
Prof. Richard Smalley, Rice University Quantum Well IR Sensors Advanced Photodetectors
Quantum Well Infrared Photodetectors
Use electronic band engineering and nanofabrication techniques
Multispectral IR imaging
Uncooled Infrared Detectors
Uses nanofabrication and advanced materials
Nanoparticle-Enhanced Detection
Increase light detection by 20X
Target Designation and CCM
IR Lasers for Target Designation
Need: Compact, 300K IR lasers
Solution: Quantum cascade lasers
Impact on Future Army
Smart, multispectral sensors coupled with ATR for target ID
Shorter logistics tail Nanoparticle Enhanced Detection Quantum Well Infrared Photodetectors AH-64 Apache Hellfire Nanometric Energetic MaterialsResearch at AFRL Munitions Directorate Scale Differences…
Very High Specific Surface Area
4- 6 Orders of Magnitude Increase
Short Diffusion Path-Length in Burning
… Can Lead to Important Performance Enhancements
Complete Burning of Fuel Particles
Accelerated Burn Rates
Ideal Detonation in Fueled Explosives Al 25 nm 29,995nm Surface Area = 0.1m2/g Surface Area = 74 m2/g 2.5 nm Al Energetic
Coating Coating Benefits...
Intimate Contact Between Fuel, Energetic Material
Fewer Problems with Processing, Handling
Material Coating Thickness on Nano-fuel Particles Is Nano-scale
Fewer Defects, Better Crystals
Improved Insensitivity Properties New approach for energetic materials: nano-thick energetic material coating-layer on nanoscale aluminum fuel particles gives improved, intimate mixing in energetic formulations, and very high specific surface area. These effects support very high burn rates. 30 Micron Particle 30 nm Particle 30 nm Aluminum Particles Each Coated with Energetic Material Layer Institute for Soldier NanotechnologiesProf. Ed Thomas, MIT Investment Areas
Nanofibres for Lighter Materials
Active/reactive Ballistic Protection (solve energy dissipation problem)
Environmental Protection
Directed Energy Protection
Micro-Climate Conditioning
Signature Management
Chem/Bio Detection and Protection
Biomonitoring/Triage
Exoskeleton Components
Forward Counter Mine University Affiliated Research Center
Investment in Soldier Protection
Industry partnership/participation
Accelerate transition of Research Products
Goals
Enhance Objective Force Warrior survivability
Leverage breakthroughs in nanoscience & nanomanufacturing Accomplishments Ribbons made of electroactive polymers
Artificial muscle and molecular muscle
Organic/inorganic multilayers for optical
Communications
Tunable optical fibers
Dendrimers for protective armors
Conducting polymer for bio-status monitors The evolution of computer technology over the last few decades has revolutionized computational capability
Faster electronics
Lower power consumption
Larger data handling capabilities
More complex information processing
The era of Nanoelectronics (<100 nm) is forecast (ITRS) to begin within 3 years (2005) Why Nanoelectronics? Stan Williams, HP Murday, NRL #168 3/02 CMOS Scaling Challenges Source: Jim Hutchby, SRC Moore’s Law: Scaling and Microelectronics Brick Wall
Barrier Optical
Lithography EUV,
e-beam,
x-Ray Time Source: Bob Trew, NC State Microelectronics Nanoelectronics Evolutionary Revolutionary Two Paths (Including photonics,
optics, magnetics, etc.) On the Evolutionary Path Silicon technology will continue down the scaling path for at least another decade if not two.
In reality, we are already in the regime of nanoelectronics.
New techniques will be invented to overcome some of the limitations of optical lithography, short channel effects, etc.
New device architecture will be invented to continue the down-scaling, e.g. vertical devices.
However, scaling cannot continue forever.
Still a lot of work on circuit and system architectures to exploit the gazillions of devices on a chip.
Then there are multichip modules, flip chip, 3-D, etc.
Silicon technology is not going away for a long time. DARPA HGI Program, PI - K. Saraswat (Stanford U.) N+/P + poly Insulating Substrate Gate Drain Source L Channel Film Gate Dielectric Gate Electrode N+/P + poly or Silicide Transistor 9 nm Vertical Field Effect Transistor Revolutionary Path Molecular electronics
Spintronics
Single Electron Transistors
Quantum Cellular Automatons
Nanotube transistors
Carbon nanotube switching devices
Quantum nanodots
Nanophotonics
Nanomagnetics
Entangled photon memories
Others Carbon Nanotube Transistors Single nanotube transistor that operates at room temperature. This three-terminal device consists of an individual semiconducting nanotube on two metal nanoelectrodes with the substrate as a gate electrode.
The nanotube is ~5 nm in diameter Nanotube Field Effect Transistor
IBM Research
Fabricated, tested, and functional Delft University of Technology, Professor Cees Dekker Figure 1. Suspended nanotube device architecture. (a) Schematic illustrating a periodic
suspended nanotube crossbar array with a device element at each crossing point. The substrate
consists of a conductor (e.g., highly doped silicon, dark-grey) that terminates in a thin dielectric
layer (e.g., SiO2, light grey). The lower nanotubes (dark grey cylinders) are supported directly on
the dielectric film, while the upper nanotubes are suspended by patterned inorganic or organic
supports (dark grey blocks). The device elements at each crossing have two stable states: off and
on. The off state (b) corresponds to the case where the nanotubes are separated, while the on state
(c) is when the tubes are in vdW contact. A device element is switched between off and on states
by applying voltage pulses that transiently charge the nanotubes to produce attractive or repulsive
forces. After switching, the junction resistance can be read by measuring the current through the
junction at a bias voltage much smaller than the voltage necessary for switching. (b) and (c)
correspond to the calculated shapes (see text and Fig. 2) of off and on states for a 20 nm (10,10)
SWNT, where the initial separation is 2.0 nm. Lieber, Harvard U. On the Revolutionary Path Revolutionary nanoelectronic devices (chips) are a long way off.
Devices/chips must be stable, reproducible, and low cost in mass production.
Devices/chips must have reliable input/output signals and interconnections.
New circuit and system architectures must be developed to match the nanoelectronic devices.
Devices/chips must be designable, testable, verifiable, and easy to package.
Devices/chips must allow for heat dissipation and removal.
First generation revolutionary nanoelectronics, if and when it is realizable, will be nitch applications, e.g. high density memories.
For random logics, silicon technology will be hard to displace.
Reliability and manufacturability are as important if not more so as speed and performance. CNT FED Display; Zhou, UNC GMR Reading Head; IBM INFORMATION NANOTECHNOLOGY STORAGE DISPLAY LOGIC CNT FET; Avouris, IBM TRANSMISSION Superlattice VCSEL; Honeywell AU Nanocluster Vapor Sensor;
Snow NRL, MSI/SAWTEK SENSE Hutchby, SRC Commercial Products Tools for characterization (FM, SPM, STM, etc.)
Tools for fabrication (NIL, DPL, etc.)
Carbon nanotubes by the pound
65nm VLSI chips
Corrosion resistant ceramic nanoparticle coatings
Embedded nanotube polymer matrix materials
Sunscreen with TiO2 nanoparticles
Nanoenergetic particles
NEMS devices
Flat panel displays (soon)
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